MMUN2234LT3
vs
PDTD114ET-T
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
MOTOROLA SEMICONDUCTOR PRODUCTS
|
NXP SEMICONDUCTORS
|
| Package Description |
,
|
SMALL OUTLINE, R-PDSO-G3
|
| Reach Compliance Code |
unknown
|
unknown
|
| Collector Current-Max (IC) |
0.1 A
|
0.5 A
|
| DC Current Gain-Min (hFE) |
80
|
56
|
| Number of Elements |
1
|
1
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation-Max (Abs) |
0.2 W
|
|
| Surface Mount |
YES
|
YES
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
5
|
1
|
| ECCN Code |
|
EAR99
|
| Additional Feature |
|
BUILT IN BIAS RESISTOR RATIO IS 1
|
| Collector-Base Capacitance-Max |
|
8 pF
|
| Collector-Emitter Voltage-Max |
|
50 V
|
| Configuration |
|
SINGLE WITH BUILT-IN RESISTOR
|
| JESD-30 Code |
|
R-PDSO-G3
|
| Number of Terminals |
|
3
|
| Operating Temperature-Max |
|
150 °C
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
SMALL OUTLINE
|
| Qualification Status |
|
Not Qualified
|
| Terminal Form |
|
GULL WING
|
| Terminal Position |
|
DUAL
|
| Transistor Application |
|
SWITCHING
|
| Transition Frequency-Nom (fT) |
|
100 MHz
|
| VCEsat-Max |
|
0.3 V
|
|
|
|
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