MMUN2234LT3 vs PDTD114ET feature comparison

MMUN2234LT3 Motorola Semiconductor Products

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PDTD114ET NXP Semiconductors

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Rohs Code No
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer MOTOROLA INC NXP SEMICONDUCTORS
Package Description SMALL OUTLINE, R-PDSO-G3 SOT-23, 3 PIN
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.21.00.95
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 2.14 BUILT IN BIAS RESISTOR RATIO IS 1
Collector Current-Max (IC) 0.1 A 0.5 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 80 56
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e0
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type NPN NPN
Power Dissipation Ambient-Max 0.2 W
Power Dissipation-Max (Abs) 0.2 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
VCEsat-Max 0.25 V 0.3 V
Base Number Matches 5 3
Part Package Code SOT-23
Pin Count 3
Collector-Base Capacitance-Max 8 pF
Transition Frequency-Nom (fT) 100 MHz

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