MMUN2211LT1 vs MMBTA05LT3 feature comparison

MMUN2211LT1 Rochester Electronics LLC

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MMBTA05LT3 onsemi

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Pbfree Code No
Rohs Code No No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer ROCHESTER ELECTRONICS LLC ON SEMICONDUCTOR
Part Package Code SOT-23 SOT-23
Package Description CASE 318-08, TO-236, 3 PIN SMALL OUTLINE, R-PDSO-G3
Pin Count 3 3
Manufacturer Package Code CASE 318-08 CASE 318-08
Reach Compliance Code unknown not_compliant
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1
Collector Current-Max (IC) 0.1 A 0.5 A
Collector-Emitter Voltage-Max 50 V 60 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE
DC Current Gain-Min (hFE) 35 100
JEDEC-95 Code TO-236AB TO-236AB
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e0 e0
Moisture Sensitivity Level NOT SPECIFIED 1
Number of Elements 1 1
Number of Terminals 3 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 240 235
Polarity/Channel Type NPN NPN
Qualification Status COMMERCIAL Not Qualified
Surface Mount YES YES
Terminal Finish TIN LEAD TIN LEAD
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING AMPLIFIER
Transistor Element Material SILICON SILICON
Base Number Matches 6 4
ECCN Code EAR99
Factory Lead Time 4 Weeks
Operating Temperature-Max 150 °C
Power Dissipation-Max (Abs) 0.225 W
Transition Frequency-Nom (fT) 100 MHz

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