MMUN2134LT3
vs
UNR9211G
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
MOTOROLA INC
PANASONIC CORP
Package Description
SMALL OUTLINE, R-PDSO-G3
SMALL OUTLINE, R-PDSO-F3
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.21.00.95
Additional Feature
BUILT-IN BIAS RESISTOR RATIO IS 2.14
BUILT IN BIAS RESISTOR RATIO IS 1
Collector Current-Max (IC)
0.1 A
0.1 A
Collector-Emitter Voltage-Max
50 V
50 V
Configuration
SINGLE WITH BUILT-IN RESISTOR
SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE)
80
35
JEDEC-95 Code
TO-236AB
JESD-30 Code
R-PDSO-G3
R-PDSO-F3
Number of Elements
1
1
Number of Terminals
3
3
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
PNP
NPN
Power Dissipation Ambient-Max
0.2 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Form
GULL WING
FLAT
Terminal Position
DUAL
DUAL
Transistor Element Material
SILICON
SILICON
VCEsat-Max
0.25 V
Base Number Matches
3
1
Rohs Code
Pin Count
3
JESD-609 Code
e6
Moisture Sensitivity Level
1
Terminal Finish
TIN BISMUTH
Transistor Application
SWITCHING
Transition Frequency-Nom (fT)
150 MHz
Compare MMUN2134LT3 with alternatives
Compare UNR9211G with alternatives