MMUN2134LT3 vs DTC114GE feature comparison

MMUN2134LT3 Motorola Semiconductor Products

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DTC114GE ROHM Semiconductor

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Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer MOTOROLA INC ROHM CO LTD
Package Description SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.21.00.95
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 2.14 DIGITAL, BUILT IN BIAS RESISTOR
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 80 30
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type PNP NPN
Power Dissipation Ambient-Max 0.2 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Element Material SILICON SILICON
VCEsat-Max 0.25 V
Base Number Matches 3 1
Rohs Code Yes
Pin Count 3
Peak Reflow Temperature (Cel) NOT SPECIFIED
Power Dissipation-Max (Abs) 0.15 W
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING

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