MMUN2113T1
vs
PDTA144VS
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
MOTOROLA INC
NXP SEMICONDUCTORS
Package Description
SMALL OUTLINE, R-PDSO-G3
CYLINDRICAL, O-PBCY-T3
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Additional Feature
BUILT-IN BIAS RESISTOR RATIO IS 1.0
BUILT IN BIAS RESISTOR RATIO IS 0.21
Collector Current-Max (IC)
0.1 A
0.1 A
Collector-Emitter Voltage-Max
50 V
50 V
Configuration
SINGLE WITH BUILT-IN RESISTOR
SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE)
80
40
JEDEC-95 Code
TO-236AB
TO-92
JESD-30 Code
R-PDSO-G3
O-PBCY-T3
Number of Elements
1
1
Number of Terminals
3
3
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
ROUND
Package Style
SMALL OUTLINE
CYLINDRICAL
Polarity/Channel Type
PNP
PNP
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
NO
Terminal Form
GULL WING
THROUGH-HOLE
Terminal Position
DUAL
BOTTOM
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
VCEsat-Max
0.25 V
Base Number Matches
2
3
Rohs Code
Part Package Code
TO-92
Pin Count
3
JESD-609 Code
e3
Power Dissipation-Max (Abs)
0.5 W
Terminal Finish
Tin (Sn)
Compare MMUN2113T1 with alternatives
Compare PDTA144VS with alternatives