MMSZ5230B-GT1 vs 1N6316BD2A-JQRS.GBDM feature comparison

MMSZ5230B-GT1 Sangdest Microelectronics (Nanjing) Co Ltd

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1N6316BD2A-JQRS.GBDM TT Electronics Power and Hybrid / Semelab Limited

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Rohs Code Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer SANGDEST MICROELECTRONICS (NANJING) CO LTD SEMELAB LTD
Package Description R-PDSO-G2 R-CDSO-N2
Reach Compliance Code unknown unknown
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE ZENER DIODE
JESD-30 Code R-PDSO-G2 R-CDSO-N2
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material PLASTIC/EPOXY CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 0.5 W 0.5 W
Qualification Status Not Qualified Not Qualified
Reference Voltage-Nom 4.7 V 4.7 V
Surface Mount YES YES
Technology ZENER ZENER
Terminal Form GULL WING NO LEAD
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Voltage Tol-Max 5% 5%
Working Test Current 20 mA 20 mA
Base Number Matches 1 1
Pin Count 2
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature HIGH RELIABILITY
Operating Temperature-Max 175 °C
Operating Temperature-Min -65 °C

Compare MMSZ5230B-GT1 with alternatives

Compare 1N6316BD2A-JQRS.GBDM with alternatives