MMSZ5230B-G
vs
1N5230B-T3
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
SANGDEST MICROELECTRONICS (NANJING) CO LTD
WON-TOP ELECTRONICS CO LTD
Package Description
R-PDSO-G2
Reach Compliance Code
unknown
compliant
Configuration
SINGLE
SINGLE
Diode Element Material
SILICON
SILICON
Diode Type
ZENER DIODE
ZENER DIODE
JESD-30 Code
R-PDSO-G2
O-LALF-W2
Number of Elements
1
1
Number of Terminals
2
2
Package Body Material
PLASTIC/EPOXY
GLASS
Package Shape
RECTANGULAR
ROUND
Package Style
SMALL OUTLINE
LONG FORM
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
0.5 W
0.5 W
Qualification Status
Not Qualified
Reference Voltage-Nom
4.7 V
4.7 V
Surface Mount
YES
NO
Technology
ZENER
ZENER
Terminal Form
GULL WING
WIRE
Terminal Position
DUAL
AXIAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Voltage Tol-Max
5%
5%
Working Test Current
20 mA
20 mA
Base Number Matches
3
3
ECCN Code
EAR99
HTS Code
8541.10.00.50
Case Connection
ISOLATED
Dynamic Impedance-Max
19 Ω
Forward Voltage-Max (VF)
1.1 V
JEDEC-95 Code
DO-35
JESD-609 Code
e0
Knee Impedance-Max
1900 Ω
Operating Temperature-Max
175 °C
Operating Temperature-Min
-65 °C
Reverse Current-Max
5 µA
Reverse Test Voltage
2 V
Terminal Finish
TIN LEAD
Voltage Temp Coeff-Max
1.41 mV/°C
Compare MMSZ5230B-G with alternatives
Compare 1N5230B-T3 with alternatives