MMSF6N01HD
vs
DMN3025LSS-13
feature comparison
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
MOTOROLA INC
|
DIODES INC
|
| Package Description |
SMALL OUTLINE, R-PDSO-G8
|
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Configuration |
SEPARATE, 2 ELEMENTS
|
SINGLE
|
| DS Breakdown Voltage-Min |
12 V
|
|
| Drain Current-Max (ID) |
6 A
|
7.2 A
|
| Drain-source On Resistance-Max |
0.045 Ω
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-PDSO-G8
|
|
| Number of Elements |
2
|
1
|
| Number of Terminals |
8
|
|
| Operating Mode |
ENHANCEMENT MODE
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
SMALL OUTLINE
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
GULL WING
|
|
| Terminal Position |
DUAL
|
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
|
| Base Number Matches |
3
|
1
|
| Rohs Code |
|
Yes
|
| Factory Lead Time |
|
24 Weeks
|
| Samacsys Manufacturer |
|
Diodes Incorporated
|
| JESD-609 Code |
|
e3
|
| Moisture Sensitivity Level |
|
1
|
| Operating Temperature-Max |
|
150 °C
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Power Dissipation-Max (Abs) |
|
1.4 W
|
| Terminal Finish |
|
MATTE TIN
|
| Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|
Compare MMSF6N01HD with alternatives
Compare DMN3025LSS-13 with alternatives