MMSF10N02ZR2
vs
SI4160DY-T1-GE3
feature comparison
| Part Life Cycle Code |
Transferred
|
Active
|
| Ihs Manufacturer |
MOTOROLA INC
|
VISHAY INTERTECHNOLOGY INC
|
| Package Description |
SMALL OUTLINE, R-PDSO-G8
|
HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8
|
| Reach Compliance Code |
unknown
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Additional Feature |
LOGIC LEVEL COMPATIBLE
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
20 V
|
30 V
|
| Drain Current-Max (ID) |
10 A
|
25.4 A
|
| Drain-source On Resistance-Max |
0.015 Ω
|
0.0049 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| Feedback Cap-Max (Crss) |
480 pF
|
|
| JESD-30 Code |
R-PDSO-G8
|
R-PDSO-G8
|
| JESD-609 Code |
e0
|
e3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
8
|
8
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
2.5 W
|
5.7 W
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
Matte Tin (Sn)
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
4
|
2
|
| Rohs Code |
|
Yes
|
| Samacsys Manufacturer |
|
Vishay
|
| JEDEC-95 Code |
|
MS-012AA
|
| Moisture Sensitivity Level |
|
1
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|
Compare MMSF10N02ZR2 with alternatives
Compare SI4160DY-T1-GE3 with alternatives