MMFT1N10ET3
vs
MMFT1N10ET1
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
ONSEMI
|
MOTOROLA INC
|
| Reach Compliance Code |
not_compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Factory Lead Time |
4 Weeks
|
|
| Additional Feature |
AVALANCHE RATED
|
AVALANCHE RATED
|
| Case Connection |
DRAIN
|
DRAIN
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
100 V
|
100 V
|
| Drain Current-Max (ID) |
1 A
|
1 A
|
| Drain-source On Resistance-Max |
0.25 Ω
|
0.25 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-261AA
|
TO-261AA
|
| JESD-30 Code |
R-PDSO-G4
|
R-PDSO-G4
|
| JESD-609 Code |
e0
|
e0
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
4
|
4
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
235
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
0.8 W
|
0.8 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
TIN LEAD
|
Tin/Lead (Sn/Pb)
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| Package Description |
|
SMALL OUTLINE, R-PDSO-G4
|
| HTS Code |
|
8541.21.00.95
|
| Power Dissipation Ambient-Max |
|
0.8 W
|
|
|
|
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