MMDF7N02ZR2
vs
MMDF5N02ZR2
feature comparison
Pbfree Code |
No
|
|
Rohs Code |
No
|
No
|
Part Life Cycle Code |
Active
|
Obsolete
|
Ihs Manufacturer |
ROCHESTER ELECTRONICS LLC
|
ON SEMICONDUCTOR
|
Part Package Code |
SOT
|
SOT
|
Package Description |
SO-8
|
SO-8
|
Pin Count |
8
|
8
|
Reach Compliance Code |
unknown
|
not_compliant
|
Additional Feature |
ESD PROTECTED, LOGIC LEVEL COMPATIBLE
|
LOGIC LEVEL COMPATIBLE
|
Configuration |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
|
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
20 V
|
20 V
|
Drain Current-Max (ID) |
7 A
|
5 A
|
Drain-source On Resistance-Max |
0.027 Ω
|
0.04 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
Feedback Cap-Max (Crss) |
155 pF
|
225 pF
|
JESD-30 Code |
R-PDSO-G8
|
R-PDSO-G8
|
JESD-609 Code |
e0
|
e0
|
Moisture Sensitivity Level |
NOT SPECIFIED
|
|
Number of Elements |
2
|
2
|
Number of Terminals |
8
|
8
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
235
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Qualification Status |
COMMERCIAL
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
TIN LEAD
|
TIN LEAD
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
DUAL
|
DUAL
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
ECCN Code |
|
EAR99
|
Operating Temperature-Max |
|
150 °C
|
Power Dissipation-Max (Abs) |
|
2 W
|
|
|
|
Compare MMDF7N02ZR2 with alternatives
Compare MMDF5N02ZR2 with alternatives