MMDF2P01HDR2
vs
934055451118
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
MOTOROLA SEMICONDUCTOR PRODUCTS
NEXPERIA
Package Description
,
SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code
unknown
compliant
Drain Current-Max (Abs) (ID)
3.4 A
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Polarity/Channel Type
P-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
2 W
Surface Mount
YES
YES
Base Number Matches
5
2
ECCN Code
EAR99
Date Of Intro
2017-02-01
Additional Feature
LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas)
13 mJ
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
30 V
Drain Current-Max (ID)
3.4 A
Drain-source On Resistance-Max
0.1 Ω
JEDEC-95 Code
MS-012AA
JESD-30 Code
R-PDSO-G8
JESD-609 Code
e4
Moisture Sensitivity Level
1
Number of Elements
2
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Pulsed Drain Current-Max (IDM)
14 A
Terminal Finish
NICKEL PALLADIUM GOLD
Terminal Form
GULL WING
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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