MMDF2N02ER2
vs
F5H3N
feature comparison
| Part Life Cycle Code |
Transferred
|
Obsolete
|
| Ihs Manufacturer |
MOTOROLA INC
|
SHINDENGEN ELECTRIC MANUFACTURING CO LTD
|
| Part Package Code |
SOT
|
|
| Package Description |
SMALL OUTLINE, R-PDSO-G8
|
SMALL OUTLINE, R-PDSO-G8
|
| Pin Count |
8
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Additional Feature |
LOGIC LEVEL COMPATIBLE
|
|
| Avalanche Energy Rating (Eas) |
245 mJ
|
|
| Configuration |
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
|
SINGLE
|
| DS Breakdown Voltage-Min |
25 V
|
30 V
|
| Drain Current-Max (ID) |
3.6 A
|
5 A
|
| Drain-source On Resistance-Max |
0.1 Ω
|
0.07 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-PDSO-G8
|
R-PDSO-G8
|
| JESD-609 Code |
e0
|
e0
|
| Number of Elements |
2
|
1
|
| Number of Terminals |
8
|
8
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
18 A
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
TIN LEAD
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Turn-off Time-Max (toff) |
140 ns
|
|
| Turn-on Time-Max (ton) |
40 ns
|
|
| Base Number Matches |
4
|
1
|
| Pbfree Code |
|
No
|
| Rohs Code |
|
No
|
| Moisture Sensitivity Level |
|
2
|
| Peak Reflow Temperature (Cel) |
|
240
|
| Power Dissipation-Max (Abs) |
|
1.25 W
|
|
|
|
Compare MMDF2N02ER2 with alternatives
Compare F5H3N with alternatives