MMDF1N05ER2G
vs
IRF7102TR
feature comparison
All Stats
Differences Only
Pbfree Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
ONSEMI
INTERNATIONAL RECTIFIER CORP
Part Package Code
SOIC-8 Narrow Body
Package Description
SO-8
SMALL OUTLINE, R-PDSO-G8
Pin Count
8
Manufacturer Package Code
751-07
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.29.00.95
8541.29.00.95
Samacsys Manufacturer
onsemi
Additional Feature
LOGIC LEVEL COMPATIBLE
LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas)
300 mJ
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
50 V
50 V
Drain Current-Max (ID)
2 A
2 A
Drain-source On Resistance-Max
0.3 Ω
0.3 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G8
R-PDSO-G8
JESD-609 Code
e3
e0
Moisture Sensitivity Level
1
Number of Elements
2
2
Number of Terminals
8
8
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
2 W
Pulsed Drain Current-Max (IDM)
10 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
Tin (Sn)
TIN LEAD
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
40
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Power Dissipation Ambient-Max
2 W
Compare MMDF1N05ER2G with alternatives
Compare IRF7102TR with alternatives