MMCJ-65608L-45CBSHXXX
vs
MMDJ-65608V-45:R
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
MATRA MHS
TEMIC SEMICONDUCTORS
Package Description
,
Reach Compliance Code
unknown
unknown
ECCN Code
3A001.A.2.C
HTS Code
8542.32.00.41
Access Time-Max
45 ns
45 ns
JESD-30 Code
R-CDIP-T32
R-CDFP-F32
Memory Density
1048576 bit
1048576 bit
Memory IC Type
STANDARD SRAM
STANDARD SRAM
Memory Width
8
8
Number of Functions
1
1
Number of Ports
1
1
Number of Terminals
32
32
Number of Words
131072 words
131072 words
Number of Words Code
128000
128000
Operating Mode
ASYNCHRONOUS
ASYNCHRONOUS
Operating Temperature-Max
125 °C
125 °C
Operating Temperature-Min
-55 °C
-55 °C
Organization
128KX8
128KX8
Output Characteristics
3-STATE
3-STATE
Output Enable
YES
YES
Package Body Material
CERAMIC, METAL-SEALED COFIRED
CERAMIC, METAL-SEALED COFIRED
Package Code
DIP
DFP
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
FLATPACK
Parallel/Serial
PARALLEL
PARALLEL
Qualification Status
Not Qualified
Not Qualified
Screening Level
MIL-STD-883 Class B (Modified)
MIL-STD-883 Class B (Modified)
Standby Voltage-Min
2 V
2 V
Supply Voltage-Max (Vsup)
5.5 V
5.5 V
Supply Voltage-Min (Vsup)
4.5 V
4.5 V
Supply Voltage-Nom (Vsup)
5 V
5 V
Surface Mount
NO
YES
Technology
CMOS
CMOS
Temperature Grade
MILITARY
MILITARY
Terminal Form
THROUGH-HOLE
FLAT
Terminal Position
DUAL
DUAL
Base Number Matches
1
1
Compare MMCJ-65608L-45CBSHXXX with alternatives
Compare MMDJ-65608V-45:R with alternatives