MMBZ9V1AL-13 vs MMBZ12VALT1 feature comparison

MMBZ9V1AL-13 Diodes Incorporated

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MMBZ12VALT1 Rochester Electronics LLC

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Pbfree Code No No
Rohs Code No No
Part Life Cycle Code Obsolete Active
Ihs Manufacturer DIODES INC ROCHESTER ELECTRONICS LLC
Package Description R-PDSO-G3 R-PDSO-G3
Pin Count 3 3
Reach Compliance Code unknown unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Max 9.56 V 12.6 V
Breakdown Voltage-Min 8.65 V 11.4 V
Configuration COMMON ANODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e0 e0
Non-rep Peak Rev Power Dis-Max 24 W 40 W
Number of Elements 2 2
Number of Terminals 3 3
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 0.225 W 0.225 W
Qualification Status Not Qualified COMMERCIAL
Rep Pk Reverse Voltage-Max 6 V 8.5 V
Surface Mount YES YES
Technology AVALANCHE ZENER
Terminal Finish TIN LEAD TIN LEAD
Terminal Form GULL WING GULL WING
Terminal Position SINGLE DUAL
Base Number Matches 1 3
Part Package Code SOT-23
Manufacturer Package Code CASE 318-08
JEDEC-95 Code TO-236
Moisture Sensitivity Level NOT SPECIFIED
Peak Reflow Temperature (Cel) 240
Time@Peak Reflow Temperature-Max (s) 30

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