MMBZ9V1AL-13 vs MMBZ9V1ALT3G feature comparison

MMBZ9V1AL-13 Diodes Incorporated

Buy Now Datasheet

MMBZ9V1ALT3G onsemi

Buy Now Datasheet
Pbfree Code No
Rohs Code No Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer DIODES INC ON SEMICONDUCTOR
Package Description R-PDSO-G3 R-PDSO-G3
Pin Count 3 3
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 9.56 V 9.56 V
Breakdown Voltage-Min 8.65 V 8.65 V
Configuration COMMON ANODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e0 e3
Non-rep Peak Rev Power Dis-Max 24 W 24 W
Number of Elements 2 2
Number of Terminals 3 3
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 0.225 W 0.225 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 6 V 6 V
Surface Mount YES YES
Technology AVALANCHE ZENER
Terminal Finish TIN LEAD TIN
Terminal Form GULL WING GULL WING
Terminal Position SINGLE DUAL
Base Number Matches 1 2
Part Package Code SOT-23
Manufacturer Package Code CASE 318-08
Breakdown Voltage-Nom 9.1 V
Clamping Voltage-Max 14 V
JEDEC-95 Code TO-236
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260

Compare MMBZ9V1AL-13 with alternatives

Compare MMBZ9V1ALT3G with alternatives