MMBZ5255ELT1G vs 1N5255BAZ1 feature comparison

MMBZ5255ELT1G onsemi

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1N5255BAZ1 STMicroelectronics

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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer ON SEMICONDUCTOR STMICROELECTRONICS
Part Package Code SOT-23
Package Description R-PDSO-G3 O-LALF-W2
Pin Count 3
Manufacturer Package Code CASE 318-08
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE ZENER DIODE
Dynamic Impedance-Max 44 Ω
JEDEC-95 Code TO-236 DO-35
JESD-30 Code R-PDSO-G3 O-LALF-W2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 3 2
Operating Temperature-Max 150 °C 200 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY GLASS
Package Shape RECTANGULAR ROUND
Package Style SMALL OUTLINE LONG FORM
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 0.225 W 0.5 W
Qualification Status Not Qualified Not Qualified
Reference Voltage-Nom 28 V 28 V
Surface Mount YES NO
Technology ZENER ZENER
Terminal Finish TIN
Terminal Form GULL WING WIRE
Terminal Position DUAL AXIAL
Voltage Tol-Max 5% 5%
Working Test Current 4.5 mA 4.5 mA
Base Number Matches 1 1
Case Connection ISOLATED
Knee Impedance-Max 600 Ω
Reverse Current-Max 0.1 µA
Voltage Temp Coeff-Max 25.48 mV/°C

Compare MMBZ5255ELT1G with alternatives

Compare 1N5255BAZ1 with alternatives