MMBZ33VALT116 vs MMBZ33VALFHT116 feature comparison

MMBZ33VALT116 ROHM Semiconductor

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MMBZ33VALFHT116 ROHM Semiconductor

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Not Recommended Not Recommended
Ihs Manufacturer ROHM CO LTD ROHM CO LTD
Package Description R-PDSO-G3
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Samacsys Manufacturer ROHM Semiconductor ROHM Semiconductor
Additional Feature HIGH RELIABILITY HIGH RELIABILITY
Breakdown Voltage-Max 34.65 V 34.65 V
Breakdown Voltage-Min 31.35 V 31.35 V
Configuration COMMON ANODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 40 W 40 W
Number of Elements 2 2
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 0.225 W 0.225 W
Reference Standard IEC-61000-4-2 AEC-Q101; IEC-61000-4-2
Rep Pk Reverse Voltage-Max 26 V 26 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 10 10
Base Number Matches 1 1
Factory Lead Time 17 Weeks