MMBZ20VAL-7-F
vs
MMBZ18VALT3G
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
DIODES INC
ON SEMICONDUCTOR
Pin Count
3
3
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.10.00.50
8541.10.00.50
Samacsys Manufacturer
Diodes Incorporated
Breakdown Voltage-Max
21 V
18.9 V
Breakdown Voltage-Min
19 V
17.1 V
Breakdown Voltage-Nom
20 V
18 V
Clamping Voltage-Max
28 V
25 V
Configuration
COMMON ANODE, 2 ELEMENTS
COMMON ANODE, 2 ELEMENTS
Diode Element Material
SILICON
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code
R-PDSO-G3
R-PDSO-G3
JESD-609 Code
e3
Moisture Sensitivity Level
1
Non-rep Peak Rev Power Dis-Max
40 W
40 W
Number of Elements
2
2
Number of Terminals
3
3
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-65 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity
UNIDIRECTIONAL
UNIDIRECTIONAL
Power Dissipation-Max
0.225 W
0.225 W
Qualification Status
Not Qualified
Not Qualified
Rep Pk Reverse Voltage-Max
17 V
14.5 V
Surface Mount
YES
YES
Technology
AVALANCHE
ZENER
Terminal Finish
MATTE TIN
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Base Number Matches
1
1
Part Package Code
SOT-23
Package Description
R-PDSO-G3
Manufacturer Package Code
CASE 318-08
JEDEC-95 Code
TO-236
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Compare MMBZ18VALT3G with alternatives