MMBZ15VDLT3
vs
MMBZ15VDLT1
feature comparison
| Part Life Cycle Code |
Transferred
|
Obsolete
|
| Ihs Manufacturer |
MOTOROLA INC
|
MOTOROLA SEMICONDUCTOR PRODUCTS
|
| Package Description |
R-PDSO-G3
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
|
| HTS Code |
8541.10.00.50
|
|
| Breakdown Voltage-Max |
15.8 V
|
|
| Breakdown Voltage-Min |
14.3 V
|
|
| Breakdown Voltage-Nom |
15 V
|
15 V
|
| Clamping Voltage-Max |
21.2 V
|
21.2 V
|
| Configuration |
COMMON CATHODE, 2 ELEMENTS
|
|
| Diode Element Material |
SILICON
|
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JEDEC-95 Code |
TO-236AB
|
|
| JESD-30 Code |
R-PDSO-G3
|
|
| Non-rep Peak Rev Power Dis-Max |
40 W
|
|
| Number of Elements |
2
|
|
| Number of Terminals |
3
|
|
| Operating Temperature-Max |
150 °C
|
|
| Operating Temperature-Min |
-55 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
SMALL OUTLINE
|
|
| Polarity |
UNIDIRECTIONAL
|
BIDIRECTIONAL
|
| Power Dissipation-Max |
0.3 W
|
|
| Qualification Status |
Not Qualified
|
|
| Reverse Current-Max |
0.1 µA
|
|
| Surface Mount |
YES
|
YES
|
| Technology |
AVALANCHE
|
|
| Terminal Form |
GULL WING
|
|
| Terminal Position |
DUAL
|
|
| Base Number Matches |
3
|
4
|
| Rohs Code |
|
No
|
| JESD-609 Code |
|
e0
|
| Rep Pk Reverse Voltage-Max |
|
12.8 V
|
| Terminal Finish |
|
Tin/Lead (Sn/Pb)
|
|
|
|