MMBZ15VDLT1 vs MMBZ15VDLT3 feature comparison

MMBZ15VDLT1 Motorola Mobility LLC

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MMBZ15VDLT3 onsemi

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Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer MOTOROLA INC ON SEMICONDUCTOR
Package Description R-PDSO-G3 R-PDSO-G3
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 15.8 V 15.8 V
Breakdown Voltage-Min 14.3 V 14.3 V
Breakdown Voltage-Nom 15 V 15 V
Clamping Voltage-Max 21.2 V 21.2 V
Configuration COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code TO-236AB TO-236AB
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e0 e0
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 40 W 40 W
Number of Elements 2 2
Number of Terminals 3 3
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 0.3 W 0.225 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 12.8 V 12.8 V
Reverse Current-Max 0.1 µA
Surface Mount YES YES
Technology AVALANCHE ZENER
Terminal Finish TIN LEAD TIN LEAD
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Base Number Matches 1 3
Rohs Code No
Part Package Code SOT-23
Pin Count 3
Manufacturer Package Code CASE 318-08
Peak Reflow Temperature (Cel) 235
Reference Standard UL RECOGNIZED

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