MMBZ15VDL-7
vs
PESD12VS2UT
feature comparison
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Transferred
|
| Ihs Manufacturer |
DIODES INC
|
NXP SEMICONDUCTORS
|
| Package Description |
R-PDSO-G3
|
PLASTIC PACKAGE-3
|
| Pin Count |
3
|
3
|
| Reach Compliance Code |
not_compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.10.00.50
|
8541.10.00.50
|
| Breakdown Voltage-Max |
15.8 V
|
15.3 V
|
| Breakdown Voltage-Min |
14.3 V
|
14.7 V
|
| Breakdown Voltage-Nom |
15 V
|
15 V
|
| Clamping Voltage-Max |
21.2 V
|
|
| Configuration |
COMMON CATHODE, 2 ELEMENTS
|
COMMON ANODE, 2 ELEMENTS
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
TRANS VOLTAGE SUPPRESSOR DIODE
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
| JESD-30 Code |
R-PDSO-G3
|
R-PDSO-G3
|
| JESD-609 Code |
e0
|
e3
|
| Non-rep Peak Rev Power Dis-Max |
40 W
|
180 W
|
| Number of Elements |
2
|
2
|
| Number of Terminals |
3
|
3
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Polarity |
UNIDIRECTIONAL
|
UNIDIRECTIONAL
|
| Power Dissipation-Max |
0.225 W
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Rep Pk Reverse Voltage-Max |
12.8 V
|
12 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
AVALANCHE
|
AVALANCHE
|
| Terminal Finish |
TIN LEAD
|
Tin (Sn)
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Base Number Matches |
2
|
2
|
| Pbfree Code |
|
Yes
|
| Part Package Code |
|
SOT-23
|
| JEDEC-95 Code |
|
TO-236AB
|
| Moisture Sensitivity Level |
|
1
|
| Operating Temperature-Max |
|
150 °C
|
| Peak Reflow Temperature (Cel) |
|
260
|
| Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|
Compare MMBZ15VDL-7 with alternatives
Compare PESD12VS2UT with alternatives