MMBZ10VAL-13 vs MMBZ10VALT1 feature comparison

MMBZ10VAL-13 Diodes Incorporated

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MMBZ10VALT1 LRC Leshan Radio Co Ltd

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Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete Contact Manufacturer
Ihs Manufacturer DIODES INC LESHAN RADIO CO LTD
Package Description R-PDSO-G3 R-PDSO-G3
Pin Count 3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Breakdown Voltage-Max 10.5 V 10.5 V
Breakdown Voltage-Min 9.5 V 9.5 V
Case Connection ISOLATED
Configuration COMMON ANODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e0
Non-rep Peak Rev Power Dis-Max 24 W 24 W
Number of Elements 2 2
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 0.225 W 0.225 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 6.5 V 6.5 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Base Number Matches 1 2
Breakdown Voltage-Nom 10 V
Clamping Voltage-Max 14.2 V
JEDEC-95 Code TO-236AB

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