MMBTH10-4LT1G vs BF770A feature comparison

MMBTH10-4LT1G onsemi

Buy Now Datasheet

BF770A Siemens

Buy Now Datasheet
Pbfree Code Yes
Part Life Cycle Code Active Transferred
Ihs Manufacturer ONSEMI SIEMENS A G
Part Package Code SOT-23 (TO-236) 3 LEAD SOT-23
Package Description CASE 318-08, 3 PIN SMALL OUTLINE, R-PDSO-G3
Pin Count 3 3
Manufacturer Package Code 318-08
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.21.00.95 8541.21.00.75
Factory Lead Time 2 Days
Samacsys Manufacturer onsemi
Collector Current-Max (IC) 0.025 A 0.05 A
Collector-Base Capacitance-Max 0.7 pF 0.9 pF
Collector-Emitter Voltage-Max 25 V 12 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 120 40
Highest Frequency Band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JEDEC-95 Code TO-236 TO-236
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e3 e0
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN NPN
Power Dissipation-Max (Abs) 0.3 W 0.3 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Matte Tin (Sn) - annealed Tin/Lead (Sn/Pb)
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 800 MHz 6000 MHz
Base Number Matches 1 2
Rohs Code No
Power Dissipation Ambient-Max 0.3 W
Power Gain-Min (Gp) 13 dB
Transistor Application AMPLIFIER
VCEsat-Max 0.5 V

Compare MMBTH10-4LT1G with alternatives

Compare BF770A with alternatives