MMBTA20LT3 vs RN2116FV feature comparison

MMBTA20LT3 onsemi

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RN2116FV Toshiba America Electronic Components

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Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete Active
Ihs Manufacturer ON SEMICONDUCTOR TOSHIBA CORP
Part Package Code SOT-23
Package Description PLASTIC, CASE 318-08, 3 PIN SMALL OUTLINE, R-PDSO-F3
Pin Count 3 3
Manufacturer Package Code CASE 318-08
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 40 V 50 V
Configuration SINGLE SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 40 30
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3 R-PDSO-F3
JESD-609 Code e0
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type NPN PNP
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish TIN LEAD
Terminal Form GULL WING FLAT
Terminal Position DUAL DUAL
Transistor Application AMPLIFIER SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 125 MHz 200 MHz
Base Number Matches 3 1
Additional Feature BUILT-IN BIAS RESISTANCE RATIO IS 2.13
Peak Reflow Temperature (Cel) NOT SPECIFIED
Power Dissipation-Max (Abs) 0.15 W
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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