MMBTA20LT3
vs
PUMB11T/R
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Transferred
Transferred
Ihs Manufacturer
MOTOROLA INC
NXP SEMICONDUCTORS
Package Description
SMALL OUTLINE, R-PDSO-G3
SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.21.00.75
Collector Current-Max (IC)
0.1 A
0.1 A
Collector-Base Capacitance-Max
4 pF
Collector-Emitter Voltage-Max
40 V
50 V
Configuration
SINGLE
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE)
40
30
JEDEC-95 Code
TO-236AB
JESD-30 Code
R-PDSO-G3
R-PDSO-G6
Number of Elements
1
2
Number of Terminals
3
6
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
NPN
PNP
Power Dissipation Ambient-Max
0.225 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Transistor Application
AMPLIFIER
SWITCHING
Transistor Element Material
SILICON
SILICON
Transition Frequency-Nom (fT)
125 MHz
VCEsat-Max
0.25 V
Base Number Matches
1
1
Rohs Code
Part Package Code
SC-88
Pin Count
6
Additional Feature
BUILT IN BIAS RESISTOR RATIO IS 1
JESD-609 Code
e3
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Terminal Finish
Tin (Sn)
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare MMBTA20LT3 with alternatives
Compare PUMB11T/R with alternatives