MMBTA13G-AE3-R vs MMBTA13LT1 feature comparison

MMBTA13G-AE3-R Unisonic Technologies Co Ltd

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MMBTA13LT1 onsemi

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Part Life Cycle Code Active Obsolete
Ihs Manufacturer UNISONIC TECHNOLOGIES CO LTD ON SEMICONDUCTOR
Package Description SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
Collector Current-Max (IC) 0.5 A 0.3 A
Collector-Emitter Voltage-Max 30 V 30 V
Configuration DARLINGTON DARLINGTON
DC Current Gain-Min (hFE) 10000 10000
JEDEC-95 Code TO-236 TO-236AB
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Number of Elements 1 1
Number of Terminals 3 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type NPN NPN
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 125 MHz 125 MHz
Base Number Matches 1 3
Pbfree Code No
Part Package Code SOT-23 (TO-236) 3 LEAD
Pin Count 3
Manufacturer Package Code 318
Samacsys Manufacturer onsemi
JESD-609 Code e0
Moisture Sensitivity Level 1
Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) 235
Power Dissipation-Max (Abs) 0.225 W
Qualification Status Not Qualified
Terminal Finish Tin/Lead (Sn/Pb)
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application AMPLIFIER

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