MMBT918 vs MPSH10-T/R feature comparison

MMBT918 National Semiconductor Corporation

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MPSH10-T/R NXP Semiconductors

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Rohs Code No
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer NATIONAL SEMICONDUCTOR CORP NXP SEMICONDUCTORS
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Collector Current-Max (IC) 0.05 A 0.04 A
Collector-Base Capacitance-Max 1.7 pF 0.65 pF
Collector-Emitter Voltage-Max 15 V 25 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 20 60
Highest Frequency Band VERY HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JEDEC-95 Code TO-236AB TO-92
JESD-30 Code R-PDSO-G3 O-PBCY-T3
JESD-609 Code e0
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR ROUND
Package Style SMALL OUTLINE CYLINDRICAL
Polarity/Channel Type NPN NPN
Power Dissipation-Max (Abs) 0.225 W
Power Gain-Min (Gp) 15 dB
Qualification Status Not Qualified Not Qualified
Surface Mount YES NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING THROUGH-HOLE
Terminal Position DUAL BOTTOM
Transistor Application AMPLIFIER SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 600 MHz 650 MHz
VCEsat-Max 0.4 V 0.5 V
Base Number Matches 12 1
Part Package Code TO-92
Package Description CYLINDRICAL, O-PBCY-T3
Pin Count 3
HTS Code 8541.29.00.75
Power Dissipation Ambient-Max 1 W
Reference Standard CECC

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