MMBT918
vs
MPSH10-T/R
feature comparison
All Stats
Differences Only
Rohs Code
No
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
NATIONAL SEMICONDUCTOR CORP
NXP SEMICONDUCTORS
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
Collector Current-Max (IC)
0.05 A
0.04 A
Collector-Base Capacitance-Max
1.7 pF
0.65 pF
Collector-Emitter Voltage-Max
15 V
25 V
Configuration
SINGLE
SINGLE
DC Current Gain-Min (hFE)
20
60
Highest Frequency Band
VERY HIGH FREQUENCY BAND
ULTRA HIGH FREQUENCY BAND
JEDEC-95 Code
TO-236AB
TO-92
JESD-30 Code
R-PDSO-G3
O-PBCY-T3
JESD-609 Code
e0
Number of Elements
1
1
Number of Terminals
3
3
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
ROUND
Package Style
SMALL OUTLINE
CYLINDRICAL
Polarity/Channel Type
NPN
NPN
Power Dissipation-Max (Abs)
0.225 W
Power Gain-Min (Gp)
15 dB
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
NO
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Form
GULL WING
THROUGH-HOLE
Terminal Position
DUAL
BOTTOM
Transistor Application
AMPLIFIER
SWITCHING
Transistor Element Material
SILICON
SILICON
Transition Frequency-Nom (fT)
600 MHz
650 MHz
VCEsat-Max
0.4 V
0.5 V
Base Number Matches
12
1
Part Package Code
TO-92
Package Description
CYLINDRICAL, O-PBCY-T3
Pin Count
3
HTS Code
8541.29.00.75
Power Dissipation Ambient-Max
1 W
Reference Standard
CECC
Compare MPSH10-T/R with alternatives