MMBT5551S62Z vs SMMBT5551LT3G feature comparison

MMBT5551S62Z Fairchild Semiconductor Corporation

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SMMBT5551LT3G onsemi

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Part Life Cycle Code Obsolete Active
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP ONSEMI
Package Description SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Collector Current-Max (IC) 0.2 A 0.6 A
Collector-Emitter Voltage-Max 160 V 160 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 30 30
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type NPN NPN
Qualification Status Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application AMPLIFIER SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 100 MHz
Base Number Matches 1 1
Pbfree Code Yes
Part Package Code SOT-23 (TO-236) 3 LEAD
Pin Count 3
Manufacturer Package Code 318-08
Factory Lead Time 4 Weeks
Date Of Intro 1999-01-01
Samacsys Manufacturer onsemi
JEDEC-95 Code TO-236
JESD-609 Code e3
Moisture Sensitivity Level 1
Operating Temperature-Min -55 °C
Peak Reflow Temperature (Cel) NOT SPECIFIED
Power Dissipation-Max (Abs) 0.3 W
Reference Standard AEC-Q101
Terminal Finish Matte Tin (Sn) - annealed
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
VCEsat-Max 0.2 V

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