MMBT5551LT3G vs MMBT5551-7-F feature comparison

MMBT5551LT3G onsemi

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MMBT5551-7-F Diodes Incorporated

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Pbfree Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer ONSEMI DIODES INC
Part Package Code SOT-23 (TO-236) 3 LEAD
Package Description TO-236, 3 PIN LEAD FREE, PLASTIC PACKAGE-3
Pin Count 3 3
Manufacturer Package Code 318-08
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
Factory Lead Time 10 Weeks
Date Of Intro 1999-01-01
Samacsys Manufacturer onsemi Diodes Incorporated
Collector Current-Max (IC) 0.06 A 0.2 A
Collector-Emitter Voltage-Max 160 V 160 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 30 30
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type NPN NPN
Power Dissipation-Max (Abs) 0.3 W 0.3 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Matte Tin (Sn) - annealed MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 200 MHz 100 MHz
VCEsat-Max 0.2 V 0.2 V
Base Number Matches 1 1
Rohs Code Yes
Collector-Base Capacitance-Max 6 pF
Reference Standard MIL-STD-202

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Compare MMBT5551-7-F with alternatives