MMBT5551D87Z vs PMBT5551T/R feature comparison

MMBT5551D87Z Fairchild Semiconductor Corporation

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PMBT5551T/R NXP Semiconductors

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Rohs Code No Yes
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP NXP SEMICONDUCTORS
Package Description SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Pin Count 3 3
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Collector Current-Max (IC) 0.6 A 0.3 A
Collector-Emitter Voltage-Max 160 V 160 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 30 30
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e0 e3
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type NPN NPN
Power Dissipation-Max (Abs) 0.225 W 0.25 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Tin/Lead (Sn/Pb) MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 100 MHz 100 MHz
Base Number Matches 1 3
Part Package Code SOT-23
Collector-Base Capacitance-Max 6 pF
JEDEC-95 Code TO-236AB
Peak Reflow Temperature (Cel) 260
VCEsat-Max 0.2 V

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