MMBT5551-AU_R1_000A1
vs
2N5551TF
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
PAN JIT INTERNATIONAL INC
ONSEMI
Package Description
SMALL OUTLINE, R-PDSO-G3
LEAD FREE PACKAGE-3
Reach Compliance Code
compliant
compliant
ECCN Code
EAR99
EAR99
Collector Current-Max (IC)
0.6 A
0.6 A
Collector-Emitter Voltage-Max
160 V
160 V
Configuration
SINGLE
SINGLE
DC Current Gain-Min (hFE)
30
30
JESD-30 Code
R-PDSO-G3
O-PBCY-T3
Number of Elements
1
1
Number of Terminals
3
3
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
ROUND
Package Style
SMALL OUTLINE
CYLINDRICAL
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
NPN
NPN
Reference Standard
AEC-Q101
Surface Mount
YES
NO
Terminal Form
GULL WING
THROUGH-HOLE
Terminal Position
DUAL
BOTTOM
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Element Material
SILICON
SILICON
Transition Frequency-Nom (fT)
300 MHz
100 MHz
Base Number Matches
1
6
Pbfree Code
Part Package Code
TO-92-3 LF
Manufacturer Package Code
135AR
Factory Lead Time
9 Weeks
Samacsys Manufacturer
onsemi
JEDEC-95 Code
TO-92
JESD-609 Code
e3
Power Dissipation-Max (Abs)
0.35 W
Qualification Status
Not Qualified
Terminal Finish
MATTE TIN
Transistor Application
AMPLIFIER
Compare MMBT5551-AU_R1_000A1 with alternatives
Compare 2N5551TF with alternatives