MMBT5551
vs
SMMBT5551LT3G
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Active
Active
Ihs Manufacturer
NTE ELECTRONICS INC
ONSEMI
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
Collector Current-Max (IC)
0.6 A
0.6 A
Collector-Emitter Voltage-Max
160 V
160 V
Configuration
SINGLE
SINGLE
DC Current Gain-Min (hFE)
30
30
JESD-30 Code
R-PDSO-G3
R-PDSO-G3
Number of Elements
1
1
Number of Terminals
3
3
Operating Temperature-Max
150 °C
150 °C
Operating Temperature-Min
-55 °C
-55 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
NPN
NPN
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Transistor Application
AMPLIFIER
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
29
1
Pbfree Code
Part Package Code
SOT-23 (TO-236) 3 LEAD
Pin Count
3
Manufacturer Package Code
318
Factory Lead Time
10 Weeks
Date Of Intro
1999-01-01
Samacsys Manufacturer
onsemi
JEDEC-95 Code
TO-236
JESD-609 Code
e3
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Power Dissipation-Max (Abs)
0.3 W
Reference Standard
AEC-Q101
Terminal Finish
Matte Tin (Sn) - annealed
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
VCEsat-Max
0.2 V
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