MMBT5086 vs SMBTA14E6327 feature comparison

MMBT5086 Texas Instruments

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SMBTA14E6327 Siemens

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Rohs Code No
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer NATIONAL SEMICONDUCTOR CORP SIEMENS A G
Package Description SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.21.00.95
Additional Feature LOW NOISE
Collector Current-Max (IC) 0.1 A 0.3 A
Collector-Base Capacitance-Max 4 pF
Collector-Emitter Voltage-Max 50 V 30 V
Configuration SINGLE DARLINGTON
DC Current Gain-Min (hFE) 150 20000
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e0
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type PNP NPN
Power Dissipation Ambient-Max 0.35 W
Power Dissipation-Max (Abs) 0.225 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 40 MHz 125 MHz
VCEsat-Max 0.3 V
Base Number Matches 7 3

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