MMBT4401F2
vs
2N5582/TR
feature comparison
| Rohs Code |
Yes
|
No
|
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
YANGZHOU YANGJIE ELECTRONICS CO LTD
|
MICROSEMI CORP
|
| Package Description |
SMALL OUTLINE, R-PDSO-G3
|
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.21.00.75
|
|
| Collector Current-Max (IC) |
0.6 A
|
0.8 A
|
| Collector-Emitter Voltage-Max |
40 V
|
40 V
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
100
|
100
|
| JESD-30 Code |
R-PDSO-G3
|
O-MBCY-W3
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Temperature-Max |
150 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
METAL
|
| Package Shape |
RECTANGULAR
|
ROUND
|
| Package Style |
SMALL OUTLINE
|
CYLINDRICAL
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation Ambient-Max |
0.3 W
|
|
| Power Dissipation-Max (Abs) |
0.3 W
|
|
| Surface Mount |
YES
|
NO
|
| Terminal Form |
GULL WING
|
WIRE
|
| Terminal Position |
DUAL
|
BOTTOM
|
| Transistor Application |
AMPLIFIER
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
250 MHz
|
300 MHz
|
| Turn-off Time-Max (toff) |
255 ns
|
|
| Turn-on Time-Max (ton) |
35 ns
|
|
| VCEsat-Max |
0.4 V
|
|
| Base Number Matches |
1
|
1
|
| JEDEC-95 Code |
|
TO-46
|
|
|
|
Compare MMBT4401F2 with alternatives
Compare 2N5582/TR with alternatives