MMBT3906RF
vs
2N3906/D26Z-J35Z
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
TAIWAN SEMICONDUCTOR CO LTD
|
NATIONAL SEMICONDUCTOR CORP
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Collector Current-Max (IC) |
0.2 A
|
0.2 A
|
| Collector-Emitter Voltage-Max |
40 V
|
40 V
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
30
|
30
|
| JESD-30 Code |
R-PDSO-G3
|
O-PBCY-T3
|
| JESD-609 Code |
e3
|
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Operating Temperature-Min |
-55 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
ROUND
|
| Package Style |
SMALL OUTLINE
|
CYLINDRICAL
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Polarity/Channel Type |
PNP
|
PNP
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
NO
|
| Terminal Finish |
MATTE TIN OVER NICKEL
|
|
| Terminal Form |
GULL WING
|
THROUGH-HOLE
|
| Terminal Position |
DUAL
|
BOTTOM
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
250 MHz
|
250 MHz
|
| Turn-off Time-Max (toff) |
300 ns
|
300 ns
|
| Turn-on Time-Max (ton) |
70 ns
|
70 ns
|
| Base Number Matches |
1
|
1
|
| Package Description |
|
CYLINDRICAL, O-PBCY-T3
|
| Collector-Base Capacitance-Max |
|
4.5 pF
|
| Transistor Application |
|
SWITCHING
|
| VCEsat-Max |
|
0.4 V
|
|
|
|
Compare MMBT3906RF with alternatives
Compare 2N3906/D26Z-J35Z with alternatives