MMBFJ309LT1G
vs
PMBFJ308TRL
feature comparison
All Stats
Differences Only
Pbfree Code
Part Life Cycle Code
Active
Obsolete
Ihs Manufacturer
ONSEMI
NXP SEMICONDUCTORS
Part Package Code
SOT-23 (TO-236) 3 LEAD
Package Description
HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN
SMALL OUTLINE, R-PDSO-G3
Pin Count
3
Manufacturer Package Code
318
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
Factory Lead Time
17 Weeks, 4 Days
Samacsys Manufacturer
onsemi
Configuration
SINGLE
SINGLE
DS Breakdown Voltage-Min
25 V
25 V
FET Technology
JUNCTION
JUNCTION
Feedback Cap-Max (Crss)
2.5 pF
2.5 pF
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
VERY HIGH FREQUENCY BAND
JEDEC-95 Code
TO-236
JESD-30 Code
R-PDSO-G3
R-PDSO-G3
JESD-609 Code
e3
e3
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
DEPLETION MODE
DEPLETION MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
0.225 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
Matte Tin (Sn) - annealed
TIN
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
AMPLIFIER
AMPLIFIER
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
2
Rohs Code
Compare MMBFJ309LT1G with alternatives
Compare PMBFJ308TRL with alternatives