MMBFJ112
vs
MMBFJ112S62Z
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Transferred
|
Transferred
|
| Ihs Manufacturer |
NATIONAL SEMICONDUCTOR CORP
|
NATIONAL SEMICONDUCTOR CORP
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Configuration |
SINGLE
|
SINGLE
|
| FET Technology |
JUNCTION
|
JUNCTION
|
| JEDEC-95 Code |
TO-236AB
|
TO-236AB
|
| JESD-30 Code |
R-PDSO-G3
|
R-PDSO-G3
|
| JESD-609 Code |
e0
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
DEPLETION MODE
|
DEPLETION MODE
|
| Operating Temperature-Max |
150 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
0.35 W
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
5
|
2
|
| Package Description |
|
SMALL OUTLINE, R-PDSO-G3
|
| Drain-source On Resistance-Max |
|
30 Ω
|
|
|
|