MMBF4392LT1G
vs
MMBF4392LT1
feature comparison
Pbfree Code |
Yes
|
|
Part Life Cycle Code |
Active
|
Transferred
|
Ihs Manufacturer |
ONSEMI
|
MOTOROLA INC
|
Part Package Code |
SOT-23 (TO-236) 3 LEAD
|
|
Package Description |
CASE 318-08, 3 PIN
|
SMALL OUTLINE, R-PDSO-G3
|
Pin Count |
3
|
|
Manufacturer Package Code |
318
|
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Samacsys Manufacturer |
onsemi
|
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE
|
DS Breakdown Voltage-Min |
30 V
|
30 V
|
Drain-source On Resistance-Max |
60 Ω
|
60 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
JUNCTION
|
Feedback Cap-Max (Crss) |
3.5 pF
|
3.5 pF
|
JEDEC-95 Code |
TO-236
|
TO-236AB
|
JESD-30 Code |
R-PDSO-G3
|
R-PDSO-G3
|
JESD-609 Code |
e3
|
e0
|
Moisture Sensitivity Level |
1
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
DEPLETION MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Operating Temperature-Min |
-55 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
260
|
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
0.225 W
|
0.225 W
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
MATTE TIN
|
Tin/Lead (Sn/Pb)
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
DUAL
|
DUAL
|
Time@Peak Reflow Temperature-Max (s) |
30
|
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
5
|
HTS Code |
|
8541.21.00.95
|
Power Dissipation Ambient-Max |
|
0.225 W
|
|
|
|
Compare MMBF4392LT1G with alternatives
Compare MMBF4392LT1 with alternatives