MMBD101LT1 vs BAS70-07 feature comparison

MMBD101LT1 Rochester Electronics LLC

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BAS70-07 NXP Semiconductors

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Pbfree Code No Yes
Rohs Code No Yes
Part Life Cycle Code Active Transferred
Ihs Manufacturer ROCHESTER ELECTRONICS INC NXP SEMICONDUCTORS
Part Package Code SOT-23
Package Description R-PDSO-G3
Pin Count 3
Manufacturer Package Code CASE 318-08
Reach Compliance Code unknown compliant
Configuration SINGLE SEPARATE, 2 ELEMENTS
Diode Capacitance-Max 1 pF 2 pF
Diode Element Material SILICON SILICON
Diode Type MIXER DIODE MIXER DIODE
Frequency Band ULTRA HIGH FREQUENCY
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3 R-PDSO-G4
JESD-609 Code e0 e3
Moisture Sensitivity Level NOT SPECIFIED 1
Number of Elements 1 2
Number of Terminals 3 4
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 240 260
Power Dissipation-Max 0.225 W
Qualification Status COMMERCIAL Not Qualified
Surface Mount YES YES
Technology SCHOTTKY SCHOTTKY
Terminal Finish TIN LEAD Tin (Sn)
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 30
Base Number Matches 6 7
HTS Code 8541.10.00.70
Samacsys Manufacturer NXP
Case Connection CATHODE
Forward Voltage-Max (VF) 0.41 V
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Rep Pk Reverse Voltage-Max 70 V
Reverse Current-Max 0.1 µA
Reverse Test Voltage 50 V

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