MLD1N06CL vs MLD1N06CLT4 feature comparison

MLD1N06CL Motorola Mobility LLC

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MLD1N06CLT4 onsemi

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Rohs Code No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MOTOROLA INC ON SEMICONDUCTOR
Package Description SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2
Pin Count 3 3
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95
Additional Feature LOGIC LEVEL COMPATIBLE, ESD PROTECTED LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 80 mJ 80 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR, DIODE AND RESISTOR SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR, DIODE AND RESISTOR
DS Breakdown Voltage-Min 59 V 59 V
Drain Current-Max (ID) 1 A 1 A
Drain-source On Resistance-Max 0.75 Ω 0.75 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e0 e0
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 40 W
Power Dissipation-Max (Abs) 40 W 40 W
Pulsed Drain Current-Max (IDM) 1.8 A 1.8 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish TIN LEAD Tin/Lead (Sn80Pb20)
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 11 ns
Turn-on Time-Max (ton) 8 ns
Base Number Matches 2 2
Pbfree Code No
Part Package Code DPAK (SINGLE GAUGE) TO-252
Manufacturer Package Code 369C
Samacsys Manufacturer onsemi
Peak Reflow Temperature (Cel) 235
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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