MJE802
vs
MJE802G
feature comparison
All Stats
Differences Only
Pbfree Code
Yes
No
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
STMICROELECTRONICS
ROCHESTER ELECTRONICS LLC
Reach Compliance Code
not_compliant
unknown
ECCN Code
EAR99
HTS Code
8541.29.00.95
Samacsys Manufacturer
STMicroelectronics
Case Connection
ISOLATED
Collector Current-Max (IC)
4 A
4 A
Collector-Emitter Voltage-Max
80 V
80 V
Configuration
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
DC Current Gain-Min (hFE)
100
750
JEDEC-95 Code
TO-126
TO-225
JESD-30 Code
R-PSFM-T3
R-PSFM-T3
JESD-609 Code
e3
e3
Number of Elements
1
1
Number of Terminals
3
3
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
FLANGE MOUNT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
260
Polarity/Channel Type
NPN
NPN
Power Dissipation Ambient-Max
40 W
Power Dissipation-Max (Abs)
40 W
Qualification Status
Not Qualified
COMMERCIAL
Surface Mount
NO
NO
Terminal Finish
Matte Tin (Sn)
MATTE TIN
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
40
Transistor Application
SWITCHING
AMPLIFIER
Transistor Element Material
SILICON
SILICON
Transition Frequency-Nom (fT)
1 MHz
1 MHz
VCEsat-Max
2.5 V
Base Number Matches
1
1
Part Package Code
TO-225
Package Description
LEAD FREE, PLASTIC, CASE 77-09, 3 PIN
Pin Count
3
Manufacturer Package Code
CASE 77-09
Additional Feature
BUILT IN BIAS RESISTOR
Moisture Sensitivity Level
NOT SPECIFIED
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