MJE702
vs
2N5655
feature comparison
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
SAMSUNG SEMICONDUCTOR INC
|
STMICROELECTRONICS
|
| Reach Compliance Code |
unknown
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Collector Current-Max (IC) |
4 A
|
0.5 A
|
| Configuration |
DARLINGTON
|
SINGLE
|
| DC Current Gain-Min (hFE) |
750
|
5
|
| JESD-609 Code |
e0
|
e0
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Polarity/Channel Type |
PNP
|
NPN
|
| Power Dissipation-Max (Abs) |
40 W
|
20 W
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
TIN LEAD
|
| Transition Frequency-Nom (fT) |
1 MHz
|
10 MHz
|
| Base Number Matches |
15
|
14
|
| HTS Code |
|
8541.29.00.95
|
| Case Connection |
|
ISOLATED
|
| Collector-Base Capacitance-Max |
|
25 pF
|
| Collector-Emitter Voltage-Max |
|
250 V
|
| JEDEC-95 Code |
|
TO-126
|
| JESD-30 Code |
|
R-PSFM-T3
|
| Number of Elements |
|
1
|
| Number of Terminals |
|
3
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
FLANGE MOUNT
|
| Power Dissipation Ambient-Max |
|
20 W
|
| Qualification Status |
|
Not Qualified
|
| Terminal Form |
|
THROUGH-HOLE
|
| Terminal Position |
|
SINGLE
|
| Transistor Application |
|
AMPLIFIER
|
| Transistor Element Material |
|
SILICON
|
| VCEsat-Max |
|
10 V
|
|
|
|
Compare MJE702 with alternatives
Compare 2N5655 with alternatives