MJD200
vs
MJD200T4G
feature comparison
| Pbfree Code |
No
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
ON SEMICONDUCTOR
|
ONSEMI
|
| Part Package Code |
DPAK (SINGLE GAUGE) TO-252
|
DPAK (SINGLE GAUGE) TO-252
|
| Package Description |
SMALL OUTLINE, R-PSSO-G2
|
DPAK-3
|
| Pin Count |
3
|
3
|
| Manufacturer Package Code |
369C
|
369C
|
| Reach Compliance Code |
not_compliant
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.29.00.95
|
|
| Samacsys Manufacturer |
onsemi
|
onsemi
|
| Case Connection |
COLLECTOR
|
COLLECTOR
|
| Collector Current-Max (IC) |
5 A
|
5 A
|
| Collector-Emitter Voltage-Max |
25 V
|
25 V
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
10
|
10
|
| JESD-30 Code |
R-PSSO-G2
|
R-PSSO-G2
|
| JESD-609 Code |
e0
|
e3
|
| Moisture Sensitivity Level |
1
|
1
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
235
|
260
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation-Max (Abs) |
13 W
|
13 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
Matte Tin (Sn) - annealed
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
30
|
| Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
65 MHz
|
65 MHz
|
| Base Number Matches |
7
|
1
|
| Factory Lead Time |
|
11 Weeks, 4 Days
|
|
|
|
Compare MJD200 with alternatives
Compare MJD200T4G with alternatives