MJD112 vs UFZT605 feature comparison

MJD112 STMicroelectronics

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UFZT605 Diodes Incorporated

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Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer STMICROELECTRONICS DIODES INC
Part Package Code TO-252 SOT-223
Package Description DPAK-3 SMALL OUTLINE, R-PDSO-G4
Pin Count 3 4
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95
Case Connection COLLECTOR COLLECTOR
Collector Current-Max (IC) 2 A 1.5 A
Collector-Emitter Voltage-Max 100 V 120 V
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON
DC Current Gain-Min (hFE) 200 500
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2 R-PDSO-G4
JESD-609 Code e3 e3
Number of Elements 1 1
Number of Terminals 2 4
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED 260
Polarity/Channel Type PNP NPN
Power Dissipation Ambient-Max 20 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Tin (Sn) Matte Tin (Sn)
Terminal Form GULL WING GULL WING
Terminal Position SINGLE DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED 40
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
VCEsat-Max 3 V
Base Number Matches 2 3
Moisture Sensitivity Level 1
Transition Frequency-Nom (fT) 150 MHz

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