MJD112
vs
MJD112T4
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
STMICROELECTRONICS
|
ONSEMI
|
| Part Package Code |
TO-252
|
DPAK (SINGLE GAUGE) TO-252
|
| Package Description |
DPAK-3
|
PLASTIC, CASE 369C-01, DPAK-3
|
| Pin Count |
3
|
3
|
| Reach Compliance Code |
compliant
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.29.00.95
|
|
| Case Connection |
COLLECTOR
|
COLLECTOR
|
| Collector Current-Max (IC) |
2 A
|
2 A
|
| Collector-Emitter Voltage-Max |
100 V
|
100 V
|
| Configuration |
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
|
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
|
| DC Current Gain-Min (hFE) |
200
|
200
|
| JEDEC-95 Code |
TO-252
|
|
| JESD-30 Code |
R-PSSO-G2
|
R-PSSO-G2
|
| JESD-609 Code |
e3
|
e0
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
235
|
| Polarity/Channel Type |
PNP
|
NPN
|
| Power Dissipation Ambient-Max |
20 W
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
Tin (Sn)
|
Tin/Lead (Sn/Pb)
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| VCEsat-Max |
3 V
|
|
| Base Number Matches |
2
|
3
|
| Pbfree Code |
|
No
|
| Manufacturer Package Code |
|
369C
|
| Samacsys Manufacturer |
|
onsemi
|
| Moisture Sensitivity Level |
|
1
|
| Power Dissipation-Max (Abs) |
|
20 W
|
| Transition Frequency-Nom (fT) |
|
25 MHz
|
|
|
|
Compare MJD112 with alternatives
Compare MJD112T4 with alternatives