MH8V645AWZJ-7
vs
KMM366S823BTL-GL
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
MITSUBISHI ELECTRIC CORP
|
SAMSUNG SEMICONDUCTOR INC
|
| Package Description |
,
|
,
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8542.32.00.28
|
8542.32.00.28
|
| Access Time-Max |
70 ns
|
6 ns
|
| JESD-30 Code |
R-XDMA-N168
|
R-XDMA-N168
|
| Memory Density |
536870912 bit
|
536870912 bit
|
| Memory IC Type |
DRAM MODULE
|
SYNCHRONOUS DRAM MODULE
|
| Memory Width |
64
|
64
|
| Number of Functions |
1
|
1
|
| Number of Ports |
1
|
1
|
| Number of Terminals |
168
|
168
|
| Number of Words |
8388608 words
|
8388608 words
|
| Number of Words Code |
8000000
|
8000000
|
| Operating Mode |
ASYNCHRONOUS
|
SYNCHRONOUS
|
| Organization |
8MX64
|
8MX64
|
| Package Body Material |
UNSPECIFIED
|
UNSPECIFIED
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
MICROELECTRONIC ASSEMBLY
|
MICROELECTRONIC ASSEMBLY
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Supply Voltage-Max (Vsup) |
3.6 V
|
3.6 V
|
| Supply Voltage-Min (Vsup) |
3 V
|
3 V
|
| Supply Voltage-Nom (Vsup) |
3.3 V
|
3.3 V
|
| Surface Mount |
NO
|
NO
|
| Technology |
CMOS
|
CMOS
|
| Terminal Form |
NO LEAD
|
NO LEAD
|
| Terminal Position |
DUAL
|
DUAL
|
| Base Number Matches |
1
|
1
|
| Access Mode |
|
FOUR BANK PAGE BURST
|
| Additional Feature |
|
AUTO/SELF REFRESH
|
| Operating Temperature-Max |
|
70 °C
|
| Operating Temperature-Min |
|
|
| Self Refresh |
|
YES
|
| Temperature Grade |
|
COMMERCIAL
|
|
|
|
Compare MH8V645AWZJ-7 with alternatives
Compare KMM366S823BTL-GL with alternatives