MG75Q2YS1
vs
BSM50GB120DN2
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
TOSHIBA CORP
|
SIEMENS A G
|
| Package Description |
FLANGE MOUNT, R-PUFM-X7
|
FLANGE MOUNT, R-CUFM-X7
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Additional Feature |
HIGH SPEED
|
|
| Collector Current-Max (IC) |
75 A
|
78 A
|
| Collector-Emitter Voltage-Max |
1200 V
|
1200 V
|
| Configuration |
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
|
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
|
| Fall Time-Max (tf) |
500 ns
|
100 ns
|
| JESD-30 Code |
R-PUFM-X7
|
R-CUFM-X7
|
| Number of Elements |
2
|
2
|
| Number of Terminals |
7
|
7
|
| Package Body Material |
PLASTIC/EPOXY
|
CERAMIC, METAL-SEALED COFIRED
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
UNSPECIFIED
|
UNSPECIFIED
|
| Terminal Position |
UPPER
|
UPPER
|
| Transistor Application |
POWER CONTROL
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| VCEsat-Max |
4 V
|
3 V
|
| Base Number Matches |
1
|
3
|
| HTS Code |
|
8541.29.00.95
|
| Case Connection |
|
ISOLATED
|
| Gate-Emitter Thr Voltage-Max |
|
6.5 V
|
| Gate-Emitter Voltage-Max |
|
20 V
|
| Operating Temperature-Max |
|
150 °C
|
| Power Dissipation Ambient-Max |
|
800 W
|
| Rise Time-Max (tr) |
|
100 ns
|
| Turn-off Time-Max (toff) |
|
500 ns
|
| Turn-off Time-Nom (toff) |
|
380 ns
|
| Turn-on Time-Max (ton) |
|
100 ns
|
| Turn-on Time-Nom (ton) |
|
44 ns
|
|
|
|
Compare MG75Q2YS1 with alternatives
Compare BSM50GB120DN2 with alternatives